EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES ● With Built-in Bias Resistors. ● Simplify Circuit Design. ● Reduce a Quantity of Parts and Manufacturing Process. ● High Packing Density.

文件：113.11 Kbytes 页数：6 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Complex BRT, TESV, 50V, 0.1A

• With Built-in Bias Resistors.\n• Simplify Circuit Design.>br/>• Reduce a Quantity of Parts and Manufacturing Process;

KEC

开益禧

Silicon planer type (cathode common)

Silicon planer type (cathode common) For switching ■Features ●High reverse voltage VR ●Low forward voltage VF ●Fast reverse recovery time trr

文件：28.1 Kbytes 页数：2 Pages

PANASONIC

松下

RF POWER TRANSISTOR NPN SILICON

NPN SILICON 10 W, 512 MHz RF POWER TRANSISTOR Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 512 MHz Characteristics Output Power = 10 W Gain = 8.0 dB (Typ) Efficiency = 65 (T

文件：163.94 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Low-voltage avalanche regulator diodes

DESCRIPTION High performance voltage regulator diodes in small SOT23 plastic SMD packages. The series consists of PLVA650A to PLVA668A. FEATURES • Very low dynamic impedance at low currents: approximately 1⁄20 of conventional series • Hard breakdown knee • Low noise: approximat

文件：43.9 Kbytes 页数：8 Pages

PHI

PHI