FQD6N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.4A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FQD6N25

250VN-ChannelMOSFET

250VN-ChannelMOSFET

FQD6N25TM

N-ChannelQFETMOSFET250V,4.4A,1.0

FQI6N25

250VN-ChannelMOSFET

Features •5.5A,250V,RDS(on)=1.0Ω@VGS=10V •Lowgatecharge(typical6.6nC) •LowCrss(typical7.5pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FQP6N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=5.5A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FQP6N25

250Vn-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FQPF6N25

250VN-ChannelMOSFET

250VN-ChannelMOSFET

FQU6N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.4A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FQU6N25

250VN-ChannelMOSFET

250VN-ChannelMOSFET

KSMD6N25

250VN-CHANNELMOSFET