KND

型号：KMB2D0N60SA；Package：SOT-23；N-Ch Trench MOSFET

ThisTrenchMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristiscs.ItismainlysuitableforportableforportableequipmentandSMPS.

KND

型号：SSM6K403TU；Package：UF6；MOSFETs Silicon N-Channel MOS

1.Applications •PowerManagementSwitches •High-SpeedSwitching 2.Features (1)1.5-Vdrive (2)Lowdrain-sourceon-resistance :RDS(ON)=66mΩ(max)(@VGS=1.5V) RDS(ON)=43mΩ(max)(@VGS=1.8V) RDS(ON)=32mΩ(max)(@VGS=2.5V) RDS(ON)=28mΩ(max)(@VGS=4.0V)

KND

型号：KMB2D0N60SA；Package：SOT-23；N-Ch Trench MOSFET