丝印：KND；Package：SOT-23；N-Ch Trench MOSFET

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for portable for portable equipment and SMPS.

文件：471.86 Kbytes 页数：5 Pages

KEC

KEC(Korea Electronics)

丝印：KND；Package：UF6；MOSFETs Silicon N-Channel MOS

1. Applications • Power Management Switches • High-Speed Switching 2. Features (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 66 mΩ (max) (@VGS = 1.5 V) RDS(ON) = 43 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 32 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 28 mΩ (max) (@VGS = 4.0 V)

文件：432.79 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：KND；Package：SOT-23；N-Ch Trench MOSFET

文件：86.12 Kbytes 页数：5 Pages

KEC

KEC(Korea Electronics)

100A竊?0V N-CHANNEL MOSFET

文件：347.26 Kbytes 页数：6 Pages

KIA

可易亚半导体

110A竊?0V N-CHANNEL MOSFET

文件：205.82 Kbytes 页数：7 Pages

KIA

可易亚半导体

100A竊?5V N-CHANNEL MOSFET

文件：447.64 Kbytes 页数：8 Pages

KIA

可易亚半导体

85A竊?0V N-CHANNEL MOSFET

文件：226.8 Kbytes 页数：7 Pages

KIA

可易亚半导体

50A竊?0V N-CHANNEL MOSFET

文件：203.32 Kbytes 页数：4 Pages

KIA

可易亚半导体

9.0A竊?00V N-CHANNEL MOSFET

文件：468.42 Kbytes 页数：8 Pages

KIA

可易亚半导体

15A竊?00V N-CHANNEL MOSFET

文件：266.76 Kbytes 页数：5 Pages

KIA

可易亚半导体