Advanced high cell denity trench technology for ultra RDS(ON)

文件：649.18 Kbytes 页数：4 Pages

KERSEMI

Advanced high cell denity trench technology for ultra RDS

文件：615.61 Kbytes 页数：4 Pages

KERSEMI

isc P-Channel MOSFET Transistor

文件：275.23 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● 175oC Opereting Temperature ● Extended Safe Operating Area ● Lower Leakage Current : -10 µA (Max.) @ VDS = -60V ● Low RDS(ON) : 0.206 Ω (Typ.)

文件：231.36 Kbytes 页数：7 Pages

Fairchild

仙童半导体