KMB050N60P

N CHANNEL MOS FIELD EFFECT TRANSISTOR; VDSS= 60V, ID= 50A\nDrain-Source ON Resistance :\nRDS(ON)=0.022 @VGS= 10V\nQg(typ.) = 32nC\nImproved dv/dt capacity, high Ruggedness\nMaximum Junction Temperature Range (175°C);

General Description\nThis planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor\ncorrection , electronic lamp ballasts based on half bridge topology and switching mode power supplies.\nFEATURES\nVDSS= 60V, ID= 50A\nDrain-Source ON Resistance :\nRDS(ON)=0.022 @VGS= 10V\nQg(typ.) = 32nC\nImproved dv/dt capacity, high Ruggedness\nMaximum Junction Temperature Range (175°C)

KMB050N60P

TO-220AB PACKAGE

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactor correction,electroniclampballastsbasedonhalfbridgetopology

KMB050N60P

50A,60V Heatsink Planar N-Channel Power MOSFET

KMB050N60PA

TO-220AB PACKAGE

GeneralDescription Itsmainlysuitableforlowviltageapplicationssuchasautomotive,DC/DCconvertersandaloadswitchinbatterypoweredapplications FEATURES VDSS=60V,ID=50A Drain-SourceONResistance: RDS(ON)=18m(Max.)@VGS=10V

KMB050N60PA

N CHANNEL MOS FIELD EFFECT TRANSISTOR; VDSS= 60V, ID= 50A\nDrain-Source ON Resistance :\nRDS(ON)=18m (Max.) @VGS= 10V;

General Description\nIt s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load switch in battery powered applications\nFEATURES\nVDSS= 60V, ID= 50A\nDrain-Source ON Resistance :\nRDS(ON)=18m (Max.) @VGS= 10V