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型号	下载订购	功能描述	制造商上传企业	LOGO
KM416V1004C	文件：804.64 Kbytes Page：35 Pages	1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o 文件：804.64 Kbytes 页数：35 Pages	Samsung 三星	Samsung
KM416V1004C-45	文件：804.64 Kbytes Page：35 Pages	1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o 文件：804.64 Kbytes 页数：35 Pages	Samsung 三星	Samsung
KM416V1004C-5	文件：804.64 Kbytes Page：35 Pages	1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o 文件：804.64 Kbytes 页数：35 Pages	Samsung 三星	Samsung
KM416V1004C-6	文件：804.64 Kbytes Page：35 Pages	1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o 文件：804.64 Kbytes 页数：35 Pages	Samsung 三星	Samsung
KM416V1004C-L45	文件：804.64 Kbytes Page：35 Pages	1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o 文件：804.64 Kbytes 页数：35 Pages	Samsung 三星	Samsung
KM416V1004C-L5	文件：804.64 Kbytes Page：35 Pages	1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o 文件：804.64 Kbytes 页数：35 Pages	Samsung 三星	Samsung
KM416V1004C-L6	文件：804.64 Kbytes Page：35 Pages	1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o 文件：804.64 Kbytes 页数：35 Pages	Samsung 三星	Samsung

详细参数

型号：
KM416V1004C
制造商：
Samsung SDI
功能描述：
DRAM Chip EDO 16M-Bit 1Mx16 3.3V 44-Pin TSOP-II

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市益百分电子有限公司	KM416V1004CT-L5	SEC	TSOP44		11054	全新原装进口自己库存优势	询价
深圳市一线半导体有限公司	KM416V1004CT-L5	SEC	24+	TSOP	48		询价
深圳市毅创腾电子科技有限公司	KM416V1004CT-L6	SEC	23+	TSOP/44	7000	绝对全新原装!100%保质量特价!请放心订购!	询价
上海专毅电子科技有限公司	KM416V1004CT-L5	SEC	17+	TSOP44	9988	只做原装进口,自己库存	询价
上海鑫科润电子科技有限公司	KM416V1004CTE-L6	SEC	9904+	SOP-44	528	原装现货海量库存欢迎咨询	询价
深圳市佳鑫美电子科技有限公司	KM416V1004CT-L5	SAMSUNG	25+	TSOP	2987	只售原装自家现货!诚信经营!欢迎来电!	询价
深圳市华斯顿科技有限公司	KM416V1004CTE-L6	SEC	25+23+	SOP-44	9827	绝对原装正品全新进口深圳现货	询价
深圳市拓亿芯电子有限公司	KM416V1004CT-L5	SEC	25+	TSSOP	30000	代理全新原装现货,价格优势	询价
深圳市宇创芯科技有限公司	KM416V1004CTE-L6	SEC	24+	SOP-44	9600	原装现货,优势供应,支持实单!	询价
深圳市恒达亿科技有限公司	KM416V1004CTE-L6	SEC	25+	SOP-44	3200	全新原装、诚信经营、公司现货销售	询价

更多KM416V1004C供应商更新时间2025-11-29 9:31:00

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