KM416V1204C规格书供应价格三星Samsung-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
KM416V1204C	文件：804.64 Kbytes Page：35 Pages	1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o 文件：804.64 Kbytes 页数：35 Pages	Samsung 三星	Samsung
KM416V1204C-45	文件：804.64 Kbytes Page：35 Pages	1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o 文件：804.64 Kbytes 页数：35 Pages	Samsung 三星	Samsung
KM416V1204C-5	文件：804.64 Kbytes Page：35 Pages	1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o 文件：804.64 Kbytes 页数：35 Pages	Samsung 三星	Samsung
KM416V1204C-6	文件：804.64 Kbytes Page：35 Pages	1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o 文件：804.64 Kbytes 页数：35 Pages	Samsung 三星	Samsung
KM416V1204C-L45	文件：804.64 Kbytes Page：35 Pages	1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o 文件：804.64 Kbytes 页数：35 Pages	Samsung 三星	Samsung
KM416V1204C-L5	文件：804.64 Kbytes Page：35 Pages	1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o 文件：804.64 Kbytes 页数：35 Pages	Samsung 三星	Samsung
KM416V1204C-L6	文件：804.64 Kbytes Page：35 Pages	1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o 文件：804.64 Kbytes 页数：35 Pages	Samsung 三星	Samsung

详细参数

型号：
KM416V1204C
制造商：
SAMSUNG
制造商全称：
Samsung semiconductor
功能描述：
1M x 16Bit CMOS Dynamic RAM with Extended Data Out

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市福安瓯科技有限公司	KM416V1204CT-L5	N/A	25+	TSOP	2500	强调现货,随时查询!	询价
深圳市益百分电子有限公司	KM416V1204CT-L6	SAMSUNG	98+	TSOP	3560	全新原装进口自己库存优势	询价
谛辉(北京/上海/青岛 )电子科技有限公司	KM416V1204CT-6	SAM	25+	TSOP	18000	原厂直接发货进口原装	询价
深圳市一线半导体有限公司	KM416V1204CT-L6	SAMSUNG	24+	TSSOP	1000		询价
深圳市弘为电子有限公司	KM416V1204CT-L6T	SAMSUNG	24+	SOJ42	100	原装现货假一罚十	询价
齐创科技(上海,北京,青岛)有限公司	KM416V1204CT-L6T	SAMSUNG	23+	TSOP	5000	原装正品,假一罚十	询价
深圳市豪迈兴电子有限公司	KM416V1204CT-6L	SAMSUNG	24+	TSOP	5825	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
上海专毅电子科技有限公司	KM416V1204CT-6	SEC	17+	TSOP44	9988	只做原装进口,自己库存	询价
深圳市壹芯创科技有限公司	KM416V1204CT-6	SAMSUNG	22+	TSOP	2000	原装正品现货	询价
深圳市佳鑫美电子科技有限公司	KM416V1204CT-L5		25+	TSOP	2987	只售原装自家现货!诚信经营!欢迎来电!	询价

更多KM416V1204C供应商更新时间2025-10-10 14:24:00

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