1M x 16Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o

文件：804.64 Kbytes 页数：35 Pages

SAMSUNG

三星

1M x 16Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o

文件：804.64 Kbytes 页数：35 Pages

SAMSUNG

三星

1M x 16Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o

文件：804.64 Kbytes 页数：35 Pages

SAMSUNG

三星

1M x 16Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o

文件：804.64 Kbytes 页数：35 Pages

SAMSUNG

三星

1M x 16Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o

文件：804.64 Kbytes 页数：35 Pages

SAMSUNG

三星

1M x 16Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o

文件：804.64 Kbytes 页数：35 Pages

SAMSUNG

三星

1M x 16Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o

文件：804.64 Kbytes 页数：35 Pages

SAMSUNG

三星