KLMAG1JENB-B041数据手册Samsung中文资料规格书

描述 Description

SAMSUNG eMMC is an embedded MMC solution designed in a BGA package form. eMMC operation is identical to a MMC device and therefore is a sim-ple read and write to memory using MMC protocol v5.1 which is a industry standard.\r
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eMMC consists of NAND flash and a MMC controller.3V supply voltage is required for the NAND area(VDDF or VCC) whereas 1.8V or 3V dual supply voltage(VDD or VCCQ) is supported for the MMC controller. SAMSUNG eMMC supports 200MHz DDR-up to 400MBps with bus widths of 8 bit in order to improve sequential bandwidth, especially sequential read performance.\r
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There are several advantages of using eMMC. It is easy to use as the MMC interface allows easy integration with any microprocessor with MMC host. Any revision or amendment of NAND is invisible to the host as the embedded MMC controller insulates NAND technology from the host. This leads to faster product development as well as faster times to market.\r
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The embedded flash management software or FTL(Flash Transition Layer) of eMMC manages Wear Leveling, Bad Block Management and ECC. The FTL supports all features of the Samsung NAND flash and achieves optimal performance.

特性 Features

• embedded MultiMediaCard Ver. 5.1 compatible.\r
• SAMSUNG eMMC supports features of eMMC5.1 which are defined in JEDEC Standard\r
- Supported Features : Packed command, Cache, Discard, Sanitize, Power Off Notification, Data Tag,\r
• Partition types, Context ID, Real Time Clock, Dynamic Device Capacity, Command Queuing, Enhanced Strobe Mode,\r
• Secure Write Protection, HS200, HS400, Field Firmware Update.\r
- Non-supported Features : Large Sector Size (4KB)\r
• Full backward compatibility with previous MultiMediaCard system specification (1bit data bus, multi-eMMC systems)\r
• Data bus width : 1bit (Default), 4bit and 8bit\r
• MMC I/F Clock Frequency : 0 ~ 200MHz\r
MMC I/F Boot Frequency : 0 ~ 52MHz\r
• Temperature : Operation (-25C ~ 85C), Storage without operation (-40C ~ 85C)\r
• Power : Interface power → VDD(VCCQ) (1.70V ~ 1.95V or 2.7V ~ 3.6V) , Memory power → VDDF(VCC) (2.7V ~ 3.6V)