KIT-11006

包装：散装 类别：创客/DIY，教育 教学套件 描述：LOGICBLOCKS KIT W/GUIDE

11006

TESTJACKS

11006-R

TESTJACKS

ADJ11006

1-pole/2-pole16ApolarizedpowerrelaysVarietyofcontactarrangements

FEATURES 1.Varietyofcontactarrangements Widelineupof1FormC,1FormA,1FormB,2FormC,2FormA,2FormB,1FormA1FormB. 2.Latchingoperation Latchingviaapolarizedmagneticcircuitstructureallowsremoteoperationandlowerenergyconsumption 3.Compactwithhighc

AN11006

Singlestage2.3_2.7GHzLNAwithBFU730F

PS11006

PatchLead-CAT5E

PatchLead-CAT5E ElectricalTest 100openshortandmisswiretest

SKLD11006

DCSolidStateRelayforprintedcircuitboards

TPH11006NL

MOSFETsSiliconN-channelMOS

Applications •SwitchingVoltageRegulators •DC-DCConverters •MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=6.4nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=9.6mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=60V) (

TPN11006NL

MOSFETsSiliconN-channelMOS

Applications •SwitchingVoltageRegulators •DC-DCConverters •MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=6.4nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=9.6mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=60V) (

TPN11006PL

MOSFETsSiliconN-channelMOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=5.8nC(typ.) (3)Smalloutputcharge:Qoss=14.4nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=8.8mΩ(typ.)(VGS=10