MOSFETs Silicon N-channel MOS

Applications • Switching Voltage Regulators • DC-DC Converters • Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 6.4 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 9.6 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) (

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TOSHIBA

东芝

Power MOSFET (N-ch single 30V VDSS 60V)

Application Scope：High efficiency DC/DC converters / Motor drivers / Switching regulators\nPolarity：N-ch\nGeneration：U-MOSⅧ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain current ID 37 A \nPower Dissipation PD 30 W \nDrain-Source voltage VDSS 60 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝

MOSFETs Silicon N-channel MOS

Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 5.8 nC (typ.) (3) Small output charge: Qoss = 14.4 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 8.8 mΩ (typ.) (VGS = 10

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TOSHIBA

东芝

TEST JACKS

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ETCList of Unclassifed Manufacturers

未分类制造商

POWER TOOLS & ACCESSORIES

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TITAN-US

PVC and Nylon LED Spacers

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HEYCO