SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT(2-INPUT AND GATE)

The KIC7S08FU is a high speed C2MOS 2-INPUT AND GATE fabricated with silicon gate C2MOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining the C2MOS low power dissipation. The internal circuit is composed of 2 stages including buffer output, which enables

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KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

2 Input AND Gate

The KIC7S08FU is a high speed C2MOS 2-INPUT AND GATE fabricated with silicon gate C2MOS technology.\nIt achieves high speed operation similar to equivalent LSTTL while maintaining the C2MOS low power dissipation. The internal circuit is composed of 2 stages including buffer output, which enables hig High Speed : tpd=7ns(Typ.) at VCC=5V.\nLow Power Dissipation : ICC=1 A(Max.) at Ta=25 .\nHigh Noise Immunity : VNIH=VNIL=28% VCC(Min.).\nOutput Drive Capability : 5 LSTTL Loads.\nSymmetrical Output Impedance : | IOH | =IOL=2mA(Min.)\nBalanced Propagation Delays : tpLH tpHL\nWide Operating Voltag;

KEC

开益禧

2-INPUT AND GATE

Features • High speed operation : tpd = 4.3ns (typ.) at VCC = 5V, 15pF • Low power dissipation : ICC = 2 μA (max) at Ta = 25°C • High noise immunity : VNIH = VNIL = 28 VCC (min) • 5.5-V tolerant inputs • Wide operating voltage range : VCC = 2 to 5.5 V

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TOSHIBA

东芝

2-INPUT AND GATE

Features • High speed operation : tpd = 4.3ns (typ.) at VCC = 5V, 15pF • Low power dissipation : ICC = 2 μA (max) at Ta = 25°C • High noise immunity : VNIH = VNIL = 28 VCC (min) • 5.5-V tolerant inputs • Wide operating voltage range : VCC = 2 to 5.5 V

文件：197.09 Kbytes 页数：5 Pages

TOSHIBA

东芝

2 Input AND Gate

Features • Super high speed operation :tPD = 4.3 ns (typ.)@VCC = 5 V • Low power dissipation : ICC = 2 µA (Max.)@ Ta = 25°C • High noise immunity : VNIH = VNIH = 28 VCC (Min.) • 5.5V tolerant input. • Wide operation voltage range : VCC (opr) = 2~5.5 V

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TOSHIBA

东芝