KIA18N50HF

商品目录 MOS(场效应管) 连续漏极电流（Id）（25°C 时） 18A(Tc) 漏源电压（Vdss） 500V 栅源极阈值电压 5V @ 250uA 漏源导通电阻 320 mΩ @ 9A,10V 类型 N 沟道 最大功率耗散（Ta） 38.5W(Tc)

18N50

18Amps,500VoltsN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC18N50isanN-channelenhancementmodepowerMOSFETusingUTC’sadvancedplanarstripeandDMOStechnologytoprovideperfectperformance. Thistechnologycanwithstandhighenergypulseintheavalancheandcommutationmode.Itcanprovideminimumon-stateresistancea

18N50

18A,500VN-CHANNELPOWERMOSFET

18N50

FastSwitching

•DESCRIPTION •DrainCurrentID=18A@TC=25℃ •DrainSourceVoltage :VDSS=500V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.32Ω(Max) •FastSwitching •APPLICATIONS •Switchregulators •Switchingconverters,motordrivers,relaydrivers

18N50A

18A500VN-channelenhancedfieldeffecttransistor

18N50H

18A竊?00VN-CHANNELMOSFET

AP18N50W

N-CHANNELENHANCEMENTMODEPOWERMOSFET

AP18N50W-HF

FastSwitchingCharacteristic

FDA18N50

500VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FDA18N50

PowerFactorCorrectionConverterDesign

FDA18N50

PFCPWMCombinationController

Introduction Thisapplicationnotedescribesstep-by-stepdesignconsiderationsforapowersupplyusingtheFAN480Xcontroller.TheFAN480XcombinesaPFCcontrollerandaPWMcontroller.ThePFCcontrolleremploysaveragecurrentmodecontrolforContinuousConductionMode(CCM)boostconverter

FDP18N50

PowerFactorCorrectionConverterDesign

FDP18N50

500VN-ChannelMOSFET

Description UniFET™MOSFETisFairchildSemiconductor®’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitable

FDP18N50

PFCPWMCombinationController

Introduction Thisapplicationnotedescribesstep-by-stepdesignconsiderationsforapowersupplyusingtheFAN480Xcontroller.TheFAN480XcombinesaPFCcontrollerandaPWMcontroller.ThePFCcontrolleremploysaveragecurrentmodecontrolforContinuousConductionMode(CCM)boostconverter

FDP18N50

N-ChannelUniFETTMMOSFET500V,18A,265mΩ

Description UniFETTMMOSFETisONSemiconductor’shighvoltage MOSFETfamilybasedonplanarstripeandDMOStechnology. ThisMOSFETistailoredtoreduceon-stateresistance,andto providebetterswitchingperformanceandhigheravalanche energystrength.Thisdevicefamilyissuitablefor

FDP18N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.265Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

FDPF18N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=18A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.265Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

FDPF18N50

N-ChannelUniFETTMMOSFET500V,18A,265mΩ

Description UniFETTMMOSFETisONSemiconductor’shighvoltage MOSFETfamilybasedonplanarstripeandDMOStechnology. ThisMOSFETistailoredtoreduceon-stateresistance,andto providebetterswitchingperformanceandhigheravalanche energystrength.Thisdevicefamilyissuitablefor

FDPF18N50

500VN-ChannelMOSFET

Description UniFET™MOSFETisFairchildSemiconductor®’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitable

FDPF18N50

DualBCMPFCController

OverviewoftheEvaluationBoard TheFAN9611/12interleaveddualBoundary-Conduction-Mode(BCM)Power-FactorCorrection(PFC)controllersoperatetwoparallel-connectedboostpowertrains180ºoutofphase.Interleavingextendsthemaximumpracticalpowerlevelofthecontroltechniquefromabout