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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
KGT12N120NDH	文件：1.08493 Mbytes Page：5 Pages	High speed switching	KECKEC CORPORATION KEC株式会社	KEC
KGT12N120NDH	文件：1.08493 Mbytes Page：5 Pages	High speed switching	KECKEC CORPORATION KEC株式会社	KEC
IXFH12N120	文件：95.86 Kbytes Page：4 Pages	HighVoltageHiPerFETPowerMOSFET Features •InternationalstandardpackageJEDECTO-247AD •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Fastswitchingtimes Applications •Switch-modeandresonant-modepowersupplies •Motorcontrols •UninterruptiblePowerSupplies(UPS) •DCchoppers Advan	IXYS IXYS Integrated Circuits Division	IXYS
IXFH12N120	文件：372.1 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH12N120P	文件：371.62 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.35Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH12N120P	文件：180.04 Kbytes Page：4 Pages	PolarPowerMOSFETHiPerFET Polar™PowerMOSFETHiPerFET™ N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomou	IXYS IXYS Integrated Circuits Division	IXYS
IXFV12N120P	文件：180.04 Kbytes Page：4 Pages	PolarPowerMOSFETHiPerFET Polar™PowerMOSFETHiPerFET™ N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomou	IXYS IXYS Integrated Circuits Division	IXYS
IXFV12N120PS	文件：180.04 Kbytes Page：4 Pages	PolarPowerMOSFETHiPerFET Polar™PowerMOSFETHiPerFET™ N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackages •Fastrecoverydiode •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomou	IXYS IXYS Integrated Circuits Division	IXYS
IXTH12N120	文件：546.32 Kbytes Page：4 Pages	PowerMOSFET,AvalancheRatedHighVoltage Features •InternationalstandardpackageJEDECTO-247AD •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Fastswitchingtimes Applications •Switch-modeandresonant-modepowersupplies •Motorcontrols •UninterruptiblePowerSupplies(UPS) •DCchoppers Advan	IXYS IXYS Integrated Circuits Division	IXYS
IXTH12N120	文件：367.52 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=12A@TC=25℃ ·DrainSourceVoltage- :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
MGV12N120D	文件：79.92 Kbytes Page：4 Pages	InsulatedGateBipolarTransistorwithAnti-ParallelDiode ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltageblockingcapability.ShortcircuitratedIGBTsarespecificallysuitedforapplicationsrequiringaguaran	MotorolaMotorola, Inc 摩托罗拉	Motorola
MGW12N120	文件：136.74 Kbytes Page：5 Pages	InsulatedGateBipolarTransistor InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicat	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MGW12N120	文件：228.98 Kbytes Page：6 Pages	InsulatedGateBipolarTransistor ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsrequiringaguaranteedshortcircuitwithstandtimesuchasMotorControlDriv	MotorolaMotorola, Inc 摩托罗拉	Motorola
MGW12N120D	文件：168.58 Kbytes Page：6 Pages	InsulatedGateBipolarTransistorwithAnti-ParallelDiode InsulatedGateBipolarTransistorwithAnti-ParallelDiode N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltag	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MGW12N120D	文件：250.82 Kbytes Page：6 Pages	InsulatedGateBipolarTransistorwithAnti-ParallelDiode ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsrequiringaguara	MotorolaMotorola, Inc 摩托罗拉	Motorola
STF12N120	文件：277.64 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.69Ω(Max)@VGS=10V DESCRIPTION ·Switchingapplications.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
STFW12N120	文件：375.32 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.69Ω(Max)@VGS=10V DESCRIPTION ·Switchingapplications.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC

详细参数

型号：
KGT12N120NDH
制造商：
KEC
制造商全称：
KEC(Korea Electronics)
功能描述：
High speed switching

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市百视威讯电子科技有限公司	KGT12N120NDH		23+	N/A	90650	正品授权货源可靠	询价
深圳市汇莱威科技有限公司	KGT12N120NDH	KEC		TO-3P	265209	假一罚十原包原标签常备现货!	询价
深圳市国宇半导体科技有限公司	KGT12N120NDH	KEC	23+	TO-3P	10000	公司只做原装正品	询价
京海半导体(深圳)有限公司	KGT12N120NDH	KEC	21+	TO-3P	10000	原装现货假一罚十	询价
深圳市河锋鑫科技有限公司	KGT12N120NDH	KEC	22+	TO-3P	6000	十年配单,只做原装	询价
贸泽芯城（深圳）电子科技有限公司	KGT12N120NDH	KEC		TO-3P	13000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
易创佳业科技（深圳）有限公司	KGT12N120NDH	KEC	23+	TO-3P	6000	原装正品，支持实单	询价
深圳市得捷芯城科技有限公司	KGT12N120NDH	KEC	23+	NA/	4750	原装现货,当天可交货,原型号开票	询价
深圳市创新迹电子有限公司	KGT12N120NDH	KEC	22+	TO-3P	25000	只做原装进口现货,专注配单	询价
深圳市惊羽科技有限公司	KGT12N120NDH	KEC-株式会社	24+25+/26+27+	TO-247-3	78800	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价

更多KGT12N120NDH供应商更新时间2024-5-21 11:36:00

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