This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. Short circuit rated IGBTs are specifically suited for applications requiring a guaranteed short circuit withstand time. Fast switching characteristics result in efficient operations at high frequencies. Co–packaged IGBTs save space, reduce assembly time and cost.

• High Power Surface Mount D3PAK Package

• High Speed Eoff: 160
J/A typical at 125°C

• High Short Circuit Capability – 10
s minimum

• Soft Recovery Free Wheeling Diode is included in the package

• Robust High Voltage Termination