首页 >KF9N25F-U/PSF>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforDC/DCConvertersandswitchingmodepowersupplies. FEATURES ·VDSS=250V,ID=9.0A ·Drai | KECKEC CORPORATION KEC株式会社 | KEC | ||
250VN-ChannelMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
250VN-CHANNELMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
250VN-ChannelMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
250VN-CHANNELMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HighEnergyPowerFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
TMOSPOWERFET9.0AMPERES250VOLTS TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilities.ThishighvoltageMOSFETusesanadvancedterminationscheme | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
TMOSPOWERFET9.0AMPERES250VOLTSRDS(on)=0.45OHM TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedforlowv | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
PowerFieldEffectTransistor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
TMOSPOWERFET9.0AMPERES250VOLTSRDS(on)=0.45OHM TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedforlowv | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola |
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