首页 >KF7N80F-U/HSF>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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NCHANNELMOSFIELD GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES •VDSS=800V,ID | KECKEC CORPORATION KEC株式会社 | KEC | ||
800VN-CHANNELMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Greendeviceavailable. | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Lowgatecharge. | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
800VN-ChannelMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
800VN-ChannelMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
800VN-ChannelMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
TMOSPOWERFET7.0AMPERES800VOLTSRDS(on)=1.0OHM TMOSE−FETPowerFieldEffectTransistorTO-247withIsolatedMountingHole N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMO | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
N?묬hannelPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=7A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
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