首页 >KF5N25D-RTF/HS>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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3.8A,250VLOGICN-CHANNELMOSFET | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
3.8A,250VN-CHANNELMOSFET | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforDC/DCConvertersandswitchingmodepowersupplies. FEATURES •VDSS=250V,ID=4.4A •Dra | KECKEC CORPORATION KEC株式会社 | KEC | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforDC/DCConvertersandswitchingmodepowersupplies. FEATURES •VDSS=250V,ID=5A •Drain | KECKEC CORPORATION KEC株式会社 | KEC | ||
PowerFieldEffectTransistor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=5A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,pow | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
TMOSPOWERFET5.0AMPERES250VOLTSRDS(on)=1.0OHM TMOSE-FET™PowerFieldEffectTransistorDPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecovery | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola |
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