首页 >KF5N25D-RTF/HS>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

5N25

3.8A,250VLOGICN-CHANNELMOSFET

UTCUnisonic Technologies

友顺友顺科技股份有限公司

5N25Z

3.8A,250VN-CHANNELMOSFET

UTCUnisonic Technologies

友顺友顺科技股份有限公司

KF5N25D

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforDC/DCConvertersandswitchingmodepowersupplies. FEATURES •VDSS=250V,ID=4.4A •Dra

KECKEC CORPORATION

KEC株式会社

KF5N25F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforDC/DCConvertersandswitchingmodepowersupplies. FEATURES •VDSS=250V,ID=5A •Drain

KECKEC CORPORATION

KEC株式会社

MTD5N25E

PowerFieldEffectTransistor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTD5N25E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=5A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,pow

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTD5N25E

TMOSPOWERFET5.0AMPERES250VOLTSRDS(on)=1.0OHM

TMOSE-FET™PowerFieldEffectTransistorDPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecovery

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

供应商型号品牌批号封装库存备注价格