首页 >KF4N80F-U/PSF>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
800VN-ChannelMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Greendeviceavailable. | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
800VN-ChannelMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
TMOSPOWERFET4.0AMPERES800VOLTS TMOSE-FETHighEnergyPowerFETD2PAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithh | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
TMOSPOWERFET4.0AMPERES800VOLTSRDS(on)=3.0OHM TMOSE-FET™PowerFieldEffectTransistorN-ChannelEnhancement-ModeSiliconGate TMOSPOWERFET4.0AMPERES800VOLTSRDS(on)=3.0OHM ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Ina | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
N-ChannelEnhancement-ModeSiliconGate | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
TMOSPOWERFET4.0AMPERES800VOLTSRDS(on)=3.0OHM TMOSE-FET™PowerFieldEffectTransistorN-ChannelEnhancement-ModeSiliconGate TMOSPOWERFET4.0AMPERES800VOLTSRDS(on)=3.0OHM ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Ina | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
TMOSE-FETPOWERFIELDEFFECTTRANSISITORN-CHANNELENHANCEMENT-MODESILICONGATE | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
TMOSE-FETPOWERFIELDEFFECTTRANSISITORN-CHANNELENHANCEMENT-MODESILICONGATE | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola |
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