N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES • VDSS(Min.)= 600V, ID= 13A • Drain-Source ON Res

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KEC

KEC(Korea Electronics)

FEATURES

FEATURES * High Speed Switching * Low Saturation Voltage : VCE(sat) = 1.95 V (@ Ic=6.5A) * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 37nS (typ.) APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls * Power Supply * Lamp Ballast

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Ultra-Fast IGBT

General Description Fairchilds UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features • High speed swi

文件：537.15 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Ultra-Fast IGBT

General Description Fairchilds UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features • High speed swi

文件：542.63 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司