N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES • VDSS= 500V, ID= 13A • Dr

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KEC

KEC(Korea Electronics)

Advanced high cell denity trench technology for ultra RDS(ON)

文件：695.31 Kbytes 页数：4 Pages

KERSEMI

500V N-Channel MOSFET

文件：2.15784 Mbytes 页数：7 Pages

KERSEMI

N-Channel MOSFET 500V, 13.0 A, 0.5(ohm)

文件：837.18 Kbytes 页数：6 Pages

MGCHIP