N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES • VDSS=500V, ID

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KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

500V N-Channel MOSFET

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KERSEMI

N- CHANNEL MOSFET

APPLICATIONS  High efficiency switch mode power supplies  Electronic lamp ballasts based on half bridge  UPS FEATURES Low gate charge Low Crss (typical 16.6pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product

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JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These

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INTERSIL