首页 >KAS2105E-UM>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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SLIDEDIPSWITCHES | E-SWITCH E-switch | E-SWITCH | ||
PNP(SWITCHINGAPPLICATION) SWITCHINGAPPLICATION(BiasResistorBuiltIn) •Switchingcircuit,Inverter,Interfacecircuit,Drivercircuit •BuiltinbiasResistor(R1=4.7KΩ,R2=10KΩ) •ComplementtoKSR1105 | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
GLASS-LEADEDGENERALPURPOSEABRUPTVARACTORDIODES P/NCAPACITANCE KSV21016.8 KSV21028.2 KSV210310.0 KSV210412.0 KSV210515.0 KSV210618.0 KSV210722.0 KSV210827.0 KSV210933.0 KSV211039.0 KSV211147.0 KSV211256.0 KSV211368.0 KSV211482.0 KSV2115100.0 | KNOX Knox Semiconductor, Inc | KNOX | ||
LM2105105-V,0.5-A/0.8-AHalf-BridgeDriverwith5-VUVLOandIntegratedBootstrapDiode 1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •Integratedbootstrapdiode •5-VtypicalundervoltagelockoutonGVDD •105-VmaximumrecommendedvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurr | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
LM2105105-V,0.5-A,0.8-AHalf-BridgeDriverwith5-VUVLOandIntegratedBootstrapDiode 1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •Integratedbootstrapdiode •5-VtypicalundervoltagelockoutonGVDD •105-VmaximumrecommendedvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurr | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
LM2105107-V,0.5-A,0.8-AHalf-BridgeDriverwith5-VUVLOandIntegratedBootstrapDiode 1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •Integratedbootstrapdiode •5-VtypicalundervoltagelockoutonGVDD •107-VabsolutemaximumvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurrent | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
LM2105105-V,0.5-A,0.8-AHalf-BridgeDriverwith5-VUVLOandIntegratedBootstrapDiode 1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •Integratedbootstrapdiode •5-VtypicalundervoltagelockoutonGVDD •105-VmaximumrecommendedvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurr | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
LM2105107-V,0.5-A,0.8-AHalf-BridgeDriverwith5-VUVLOandIntegratedBootstrapDiode 1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •Integratedbootstrapdiode •5-VtypicalundervoltagelockoutonGVDD •107-VabsolutemaximumvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurrent | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
LM2105107-V,0.5-A,0.8-AHalf-BridgeDriverwith5-VUVLOandIntegratedBootstrapDiode 1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •Integratedbootstrapdiode •5-VtypicalundervoltagelockoutonGVDD •107-VabsolutemaximumvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurrent | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
Filterless6WClass-DMonoAudioAmplifier | POWERLowpower Semiconductor inc 微源半导体微源半导体股份有限公司 | POWER |
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