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OPA2658UB

DualWideband,LowPower,CurrentFeedbackOPERATIONALAMPLIFIER

BURR-BROWNTexas Instruments Incorporated

德州德州仪器

OPA2658UB

DualWideband,LowPower,CurrentFeedbackOPERATIONALAMPLIFIER

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

R2658

PHOTOMULTIPLIERTUBES

PHOTOMULTIPLIERTUBES TheR2658andtheR2658Pare28mm(1-1/8inch)diametersideonphotomultipliertubesusinganewlydevelopedInGaAssemiconductorphotocathode. TheInGaAsphotocathodeissensitivefromUVtonearIRradiations(aslongasover1010nm)longerthanwavelengthlimitofGaAs

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

R2658P

PHOTOMULTIPLIERTUBES

PHOTOMULTIPLIERTUBES TheR2658andtheR2658Pare28mm(1-1/8inch)diametersideonphotomultipliertubesusinganewlydevelopedInGaAssemiconductorphotocathode. TheInGaAsphotocathodeissensitivefromUVtonearIRradiations(aslongasover1010nm)longerthanwavelengthlimitofGaAs

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

RF2658

TRANSMITMODULATOR,IFAGC,ANDUPCONVERTER

ProductDescription TheRF2658isanintegratedcompleteQuadratureModulator,IFAGCamplifier,andUpconverterdevelopedforthetransmitsectionofdual-modeCDMA/FMcellularandPCSapplicationsandforGSM/DCSandTDMAsystems. Features •SimilartoRF9958withincreasedIFrange •Supports

RFMD

RF Micro Devices

TZ2658A

HC49SMD30MHzCrystalUnit

Features: GoodFrequencyPerturbationandStabilityovertemperature DescriptionandApplications: HC49SMDcrystalunitforuseinwirelesstelecommunicationsdevices

TAI-SAW

TAI-SAW TECHNOLOGY CO., LTD.

VB2658

P-Channel60-V(D-S)MOSFET

FEATURES •IsolatedPackage •HighVoltageIsolation=2.5kVRMS(t=60s; f=60Hz) •SinktoLeadCreepageDistance=4.8mm •P-Channel •175°COperatingTemperature •DynamicdV/dtRating •LowThermalResistance •Lead(Pb)-freeAvailable

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VB2658

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBA2658

P-Channel60V(D-S)175째CMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBA2658

P-Channel60V(D-S)MOSFET

FEATURES •TrenchFET®powerMOSFET •100RgandUIStested

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBE2658

P-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBFB2658

P-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBI2658

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBJ2658

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBL2658

P-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBL2658

P-Channel60V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PowerSwitch •LoadSwitchinHighCurrentApplications •DC/DCConverters

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBM2658

P-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBMB2658

P-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

详细参数

  • 型号:

    KA2658N

  • 制造商:

    SAMSUNG

  • 制造商全称:

    Samsung semiconductor

  • 功能描述:

    LINEAR INTEGRATED CIRCUIT

供应商型号品牌批号封装库存备注价格
SAMSUNG
23+
SOP16
1400
全新原装现货
询价
23+
N/A
36000
正品授权货源可靠
询价
OKVA
2018+
SOT23-6
13692
代理背光升压IC公司优势产品.
询价
OKVA
23+
SOT23-6
362652
代理背光升压IC公司优势产品.
询价
OKVA
23+
SOT23-6
90000
只做原厂渠道价格优势可提供技术支持
询价
OKVA
21+
SOT23-6
1507
优势代理渠道,原装正品,可全系列订货开增值税票
询价
OKVA
589220
16余年资质 绝对原盒原盘 更多数量
询价
KA
23+
SOT23-6
89630
当天发货全新原装现货
询价
KA
23+
SOT23-6
6500
只做原装正品现货!或订货假一赔十!
询价
OKVA
21+
SOT23-6
50000
全新原装正品现货,支持订货
询价
更多KA2658N供应商 更新时间2024-5-8 11:44:00