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K9F1208U0B

64Mx8BitNANDFlashMemory

GENERALDESCRIPTION Offeredin64Mx8bittheK9F1208X0Bis512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin1.8V,2.7V,3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200µso

SamsungSamsung semiconductor

三星三星半导体

K9F1208U0B-D

64Mx8BitNANDFlashMemory

GENERALDESCRIPTION Offeredin64Mx8bittheK9F1208X0Bis512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin1.8V,2.65V,3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200mson

SamsungSamsung semiconductor

三星三星半导体

K9F1208U0B-V

64Mx8BitNANDFlashMemory

GENERALDESCRIPTION Offeredin64Mx8bittheK9F1208X0Bis512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin1.8V,2.65V,3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200mson

SamsungSamsung semiconductor

三星三星半导体

K9F1208U0B-Y

64Mx8BitNANDFlashMemory

GENERALDESCRIPTION Offeredin64Mx8bittheK9F1208X0Bis512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin1.8V,2.65V,3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200mson

SamsungSamsung semiconductor

三星三星半导体

K9F1208U0C

FLASHMEMORY

GENERALDESCRIPTION Offeredin64Mx8bits,theK9F1208X0Cis512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin1.8V,2.7Vand3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200µ

SamsungSamsung semiconductor

三星三星半导体

K9F1208U0C-P

FLASHMEMORY

GENERALDESCRIPTION Offeredin64Mx8bits,theK9F1208X0Cis512Mbitwithspare16Mbitcapacity.Thedeviceisofferedin1.8V,2.7Vand3.3VVcc.ItsNANDcellprovidesthemostcost-effectivesolutIonforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200µ

SamsungSamsung semiconductor

三星三星半导体

K9F1208U0M-

64Mx8BitNANDFlashMemory

GeneralDescription TheK9F1208U0Misa64M(67,108,864)x8bitNANDFlashMemorywithaspare2,048K(2,097,152)x8bit.ItsNANDcellprovidesthemostcost-effectivesolutionforthesolidstatemassstoragemarket.Aprogramoperationcanbeperformedintypical200msonthe528-bytepageandaner

SamsungSamsung semiconductor

三星三星半导体

详细参数

  • 型号:

    K9F1208U0C-J

  • 制造商:

    SAMSUNG

  • 制造商全称:

    Samsung semiconductor

  • 功能描述:

    FLASH MEMORY

供应商型号品牌批号封装库存备注价格
SAMSUNG
2016+
BGA
7534
只做原装,假一罚十,公司可开17%增值税发票!
询价
SAMSUNG
2016+
ROHS
5632
只做进口原装正品!现货或者订货一周货期!只要要网上有
询价
SAMSUNG
BGA
7534
正品原装--自家现货-实单可谈
询价
SAMSUNG
2020+
BGA
7634
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
SAMSUNG
24+
TSOP
100000
专营DDR内存芯片原装进口现货
询价
SAMSANG
19+
BGA
256800
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
SAMSUNG
23+
BGA
8560
受权代理!全新原装现货特价热卖!
询价
SAMSUNG
三年内
1983
只做原装正品
询价
SAMSUNG/三星
1119
FLASH-NAND/64MX8NANDSLC/
4000
原装香港现货真实库存。低价
询价
SAMSUNG
24+
BGA
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
询价
更多K9F1208U0C-J供应商 更新时间2025-5-29 8:31:00