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BSS84WQ-7-F

Marking:K84;Package:SOT323;50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheBSS84WQissuitableforautomotiveapplications requiringspecificchangecontrol;

DIODESDiodes Incorporated

美台半导体

SGM66099B-5.0

Marking:K8XX;Package:WLCSP-1.22x0.83-6B;Synchronous Boost Converter with Ultra-Low Quiescent Current

GENERALDESCRIPTION TheSGM66099Bisanultra-lowquiescentcurrentsynchronousBoostconverter.1.15Vto5.2VoperationinputvoltageissuitableforLi-Mnbattery,NiMHandLi-Ionrechargeablebatteries.The1.7μA(TYP)quiescentcurrentmaximizesthelightloadefficiencyandalsoincreasesth

SGMICROSG Micro Corp

圣邦股份圣邦微电子(北京)股份有限公司

TK8A50D

Marking:K8A50D;Switching Regulator Applications

SwitchingRegulatorApplications •Lowdrain-sourceON-resistance:RDS(ON)=0.7Ω(typ.) •Highforwardtransferadmittance:|Yfs|=4.0S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=500V) •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TK8A60W5

Marking:K8A60W5;Package:TO-220SIS;MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators •MotorDrivers Features (1)Fastreverserecoverytime:trr=80ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.44Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (3)EasytocontrolGateswitching (4)Enhancementmode:Vth=3

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TK8A65W

Marking:K8A65W;Package:TO-220SIS;MOSFETs Silicon N-Channel MOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.53Ω(typ.) byusingSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.5to3.5V(VDS=10V,ID=0.3mA)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

XPQR8308QB

Marking:K89;Package:L-TOGL;MOSFETs Silicon N-channel MOS

Applications •Automotive •SwitchingVoltageRegulators •MotorDrivers •DC-DCConverters Features (1)AEC-Q101qualified (2)Lowdrain-sourceon-resistance:RDS(ON)=0.65mΩ(typ.)(VGS=10V) (3)Lowleakagecurrent:IDSS=10μA(max)(VDS=80V) (4)Enhancementmode:Vth=2.5to

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

BSS84KR

Marking:K84;Package:SOT-323;P-Channel Enhancement Mode Field Effect Transistor

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

TK8R2A06PL

Marking:K8R2A06PL;Package:TO-220SIS;MOSFETs Silicon N-channel MOS

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TK8R2E06PL

Marking:K8R2E06PL;Package:TO-220;MOSFETs Silicon N-channel MOS

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

详细参数

  • 型号:

    K8

  • 制造商:

    STMICROELECTRONICS

  • 制造商全称:

    STMicroelectronics

  • 功能描述:

    N-channel 30V - 0.006ohm - 20A - PolarPAK STripFET Power MOSFET

供应商型号品牌批号封装库存备注价格
WILLSEMI
23+
FBP-02C
15000
全新原装现货,价格优势
询价
FAIRCHILD
24+
TO-3P
9500
郑重承诺只做原装进口现货
询价
N/A
2048+
SOT-89
9851
只做原装正品现货!或订货假一赔十!
询价
N/A
23+
SOT-89
8000
只做原装现货
询价
CMOS/场效应半导体
23+
TO-220
69820
终端可以免费供样,支持BOM配单!
询价
SAMSUNG/三星
2447
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
TOSHIBA/东芝
2223+
SOT-563-6
26800
只做原装正品假一赔十为客户做到零风险
询价
SAMSUNG
24+
BGA
20000
低价现货抛售(美国 香港 新加坡)
询价
NA
24+
NA
60000
询价
BOSCH/博世
LGA8
6698
询价
更多K8供应商 更新时间2025-6-20 16:55:00