256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out

GENERAL DESCRIPTION The K6R1004C1B is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1B uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

文件：128.009 Kbytes 页数：8 Pages

Samsung

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256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out

GENERAL DESCRIPTION The K6R1004C1B is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1B uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

文件：128.009 Kbytes 页数：8 Pages

Samsung

三星

256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out

GENERAL DESCRIPTION The K6R1004C1B is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1B uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

文件：128.009 Kbytes 页数：8 Pages

Samsung

三星

256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out

GENERAL DESCRIPTION The K6R1004C1B is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1B uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

文件：128.009 Kbytes 页数：8 Pages

Samsung

三星

256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out

GENERAL DESCRIPTION The K6R1004C1B is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1B uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

文件：128.009 Kbytes 页数：8 Pages

Samsung

三星

256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out

GENERAL DESCRIPTION The K6R1004C1B is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1B uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

文件：128.009 Kbytes 页数：8 Pages

Samsung

三星

256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out

GENERAL DESCRIPTION The K6R1004C1B is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1B uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

文件：128.009 Kbytes 页数：8 Pages

Samsung

三星

256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out

GENERAL DESCRIPTION The K6R1004C1B is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1B uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

文件：128.009 Kbytes 页数：8 Pages

Samsung

三星

256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out

GENERAL DESCRIPTION The K6R1004C1B is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1B uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

文件：128.009 Kbytes 页数：8 Pages

Samsung

三星

256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out

GENERAL DESCRIPTION The K6R1004C1B is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1B uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica

文件：128.009 Kbytes 页数：8 Pages

Samsung

三星