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K6R1004C1B	文件：128.009 Kbytes Page：8 Pages	256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out GENERALDESCRIPTION TheK6R1004C1Bisa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Buses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica	SamsungSamsung Group 三星三星半导体	Samsung
K6R1004C1B-10	文件：128.009 Kbytes Page：8 Pages	256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out GENERALDESCRIPTION TheK6R1004C1Bisa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Buses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica	SamsungSamsung Group 三星三星半导体	Samsung
K6R1004C1B-12	文件：128.009 Kbytes Page：8 Pages	256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out GENERALDESCRIPTION TheK6R1004C1Bisa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Buses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica	SamsungSamsung Group 三星三星半导体	Samsung
K6R1004C1B-8	文件：128.009 Kbytes Page：8 Pages	256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out GENERALDESCRIPTION TheK6R1004C1Bisa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Buses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica	SamsungSamsung Group 三星三星半导体	Samsung
K6R1004C1B-C10	文件：128.009 Kbytes Page：8 Pages	256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out GENERALDESCRIPTION TheK6R1004C1Bisa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Buses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica	SamsungSamsung Group 三星三星半导体	Samsung
K6R1004C1B-C12	文件：128.009 Kbytes Page：8 Pages	256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out GENERALDESCRIPTION TheK6R1004C1Bisa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Buses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica	SamsungSamsung Group 三星三星半导体	Samsung
K6R1004C1B-C8	文件：128.009 Kbytes Page：8 Pages	256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out GENERALDESCRIPTION TheK6R1004C1Bisa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Buses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica	SamsungSamsung Group 三星三星半导体	Samsung
K6R1004C1B-J10	文件：128.009 Kbytes Page：8 Pages	256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out GENERALDESCRIPTION TheK6R1004C1Bisa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Buses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica	SamsungSamsung Group 三星三星半导体	Samsung
K6R1004C1B-J12	文件：128.009 Kbytes Page：8 Pages	256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out GENERALDESCRIPTION TheK6R1004C1Bisa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Buses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica	SamsungSamsung Group 三星三星半导体	Samsung
K6R1004C1B-J8	文件：128.009 Kbytes Page：8 Pages	256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out GENERALDESCRIPTION TheK6R1004C1Bisa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Buses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica	SamsungSamsung Group 三星三星半导体	Samsung
K6R1004C1A	文件：127.4 Kbytes Page：8 Pages	256Kx4HighSpeedStaticRAM(5VOperating),RevolutionaryPinout GENERALDESCRIPTION TheK6R1004C1Aisa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Auses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica	SamsungSamsung Group 三星三星半导体	Samsung
K6R1004C1C	文件：101.04 Kbytes Page：9 Pages	256Kx4Bit(withOE)High-SpeedCMOSStaticRAM(5.0VOperating). GENERALDESCRIPTION TheK6R1004C1Cisa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Cuses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate	SamsungSamsung Group 三星三星半导体	Samsung
K6R1004C1C-C	文件：101.04 Kbytes Page：9 Pages	256Kx4Bit(withOE)High-SpeedCMOSStaticRAM(5.0VOperating). GENERALDESCRIPTION TheK6R1004C1Cisa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Cuses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate	SamsungSamsung Group 三星三星半导体	Samsung
K6R1004C1C-I	文件：101.04 Kbytes Page：9 Pages	256Kx4Bit(withOE)High-SpeedCMOSStaticRAM(5.0VOperating). GENERALDESCRIPTION TheK6R1004C1Cisa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Cuses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate	SamsungSamsung Group 三星三星半导体	Samsung
K6R1004C1C-L	文件：101.04 Kbytes Page：9 Pages	256Kx4Bit(withOE)High-SpeedCMOSStaticRAM(5.0VOperating). GENERALDESCRIPTION TheK6R1004C1Cisa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Cuses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate	SamsungSamsung Group 三星三星半导体	Samsung
K6R1004C1C-P	文件：101.04 Kbytes Page：9 Pages	256Kx4Bit(withOE)High-SpeedCMOSStaticRAM(5.0VOperating). GENERALDESCRIPTION TheK6R1004C1Cisa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Cuses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate	SamsungSamsung Group 三星三星半导体	Samsung
K6R1004C1D	文件：188.68 Kbytes Page：9 Pages	256Kx4Bit(withOE)High-SpeedCMOSStaticRAM(5.0VOperating). GENERALDESCRIPTION TheK6R1004C1Disa1,048,576-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby4bits.TheK6R1004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabricate	SamsungSamsung Group 三星三星半导体	Samsung

详细参数

型号：
K6R1004C1B
制造商：
SAMSUNG
制造商全称：
Samsung semiconductor
功能描述：
256Kx4 Bit(with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市近平电子有限公司	K6R1004C1C-JC		6000	面议	19	DIP/SMD	询价
深圳市佳鑫美电子科技有限公司	K6R1004C1C-JC1	SAMSUNG	22+	SOJ	2679	原装优势!绝对公司现货!可长期供货!	询价
深圳市华斯顿科技有限公司	K6R1004C1C-JC12	SAMSUNG	22+23+	SOJ	24044	绝对原装正品现货,全新深圳原装进口现货	询价
深圳市维尔达电子有限公司	K6R1004C1C-JC12	SAMSUNG	2023+	NEW	80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价
深圳市科思奇电子科技有限公司	K6R1004C1C-JC12	SAMSUNG	22+	NEW	360000	进口原装房间现货实库实数	询价
标准国际(香港)有限公司	K6R1004C1C-JC12	SAMSUNG			9	公司优势库存热卖中!!	询价
上海涵恩科技有限公司（原上海凌岳电子）	K6R1004C1C-JC12	SAMSUNG	2023+		3000	进口原装现货	询价
深圳市晨豪科技有限公司	K6R1004C1C-JC12	SAMSUNG/三星	23+	SOJ-32	89630	当天发货全新原装现货	询价
深圳市莱克讯科技有限公司	K6R1004C1C-JC15	SAMSUNG	2017+	SOJ	24589	深圳代理原装现货进口库存(香港-日本-台湾)开17点增票	询价
深圳市特顺芯科技有限公司	K6R1004C1C-JC15	SAMSUNG	00+	SOJ	61		询价

更多K6R1004C1B供应商更新时间2024-5-18 15:30:00

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