32K x 8 Bit High-Speed CMOS Static RAM

GENERAL DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u

文件：181.62 Kbytes 页数：9 Pages

SAMSUNG

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32K x 8 Bit High-Speed CMOS Static RAM

GENERAL DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u

文件：181.62 Kbytes 页数：9 Pages

SAMSUNG

三星

32K x 8 Bit High-Speed CMOS Static RAM

GENERAL DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u

文件：181.62 Kbytes 页数：9 Pages

SAMSUNG

三星

32K x 8 Bit High-Speed CMOS Static RAM

GENERAL DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u

文件：181.62 Kbytes 页数：9 Pages

SAMSUNG

三星

32K x 8 Bit High-Speed CMOS Static RAM

GENERAL DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u

文件：181.62 Kbytes 页数：9 Pages

SAMSUNG

三星

32K x 8 Bit High-Speed CMOS Static RAM

GENERAL DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u

文件：181.62 Kbytes 页数：9 Pages

SAMSUNG

三星

32K x 8 Bit High-Speed CMOS Static RAM

GENERAL DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u

文件：181.62 Kbytes 页数：9 Pages

SAMSUNG

三星

32K x 8 Bit High-Speed CMOS Static RAM

GENERAL DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u

文件：181.62 Kbytes 页数：9 Pages

SAMSUNG

三星

32K x 8 Bit High-Speed CMOS Static RAM

GENERAL DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u

文件：181.62 Kbytes 页数：9 Pages

SAMSUNG

三星

32K x 8 Bit High-Speed CMOS Static RAM

GENERAL DESCRIPTION The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated u

文件：181.62 Kbytes 页数：9 Pages

SAMSUNG

三星