K6E0808C1E-I10中文资料三星数据手册PDF规格书

GENERAL DESCRIPTION

The K6E0808C1E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG¢s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6E0808C1E is packaged in a 300mil 28-pin plastic SOJ or TSOP1 forward.

FEATURES

• Fast Access Time 10, 12, 15ns(Max.)

• Low Power Dissipation

Standby (TTL) : 20mA(Max.)

(CMOS) : 2mA(Max.)

0.6mA(Max.) L-ver. Only

Operating K6E0808C1E-10 : 80mA(Max.)

K6E0808C1E-12 : 80mA(Max.)

K6E0808C1E-15 : 80mA(Max.)

• Single 5.0V±10 Power Supply

• TTL Compatible Inputs and Outputs

• I/O Compatible with 3.3V Device

• Fully Static Operation

- No Clock or Refresh required

• Three State Outputs

• 2V Minimum Data Retention : L-Ver. only

• Standard Pin Configuration

K6E0808C1E-J : 28-SOJ-300

K6E0808C1E-T : 28-TSOP1-0813. 4F