K6E0808C1C-12中文资料三星数据手册PDF规格书

GENERAL DESCRIPTION

The K6E0808C1C is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The K6E0808C1C uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG¢s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6E0808C1C is packaged in a 300mil 28-pin plastic SOJ or TSOP1 forward.

FEATURES

• Fast Access Time 12, 15, 20ns(Max.)

• Low Power Dissipation

Standby (TTL) : 40mA(Max.) (CMOS) : 2mA(Max.)

Operating K6E0808C1C-12 : 165mA(Max.) K6E0808C1C-15 : 150mA(Max.) K6E0808C1C-20 : 140mA(Max.)

• Single 5.0V±10 Power Supply

• TTL Compatible Inputs and Outputs

• I/O Compatible with 3.3V Device

• Fully Static Operation

- No Clock or Refresh required

• Three State Outputs

• Standard Pin Configuration

K6E0808C1C-J : 28-SOJ-300

K6E0808C1C-T : 28-TSOP1-0813. 4F