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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
PHK5NQ10T	文件：619.15 Kbytes Page：9 Pages	N-Channel100V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •ExtremelyLowQgdforSwitchingLosses •100RgTested •100AvalancheTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PrimarySideSwitch	VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
PHK5NQ10T	文件：84.3 Kbytes Page：7 Pages	N-channelTrenchMOStransistor GENERALDESCRIPTION N-channelenhancementmodefield-effecttransistorinaplasticenvelopeusing’trench’technology. FEATURES •Lowon-stateresistance •Fastswitching •Lowprofilesurfacemountpackage Applications:- •Motorandrelaydrivers •d.c.tod.c.converters	PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦	Philips

零件编号

下载订购

功能描述/丝印

制造商上传企业

LOGO

PHK5NQ10T

文件：619.15 Kbytes

Page：9 Pages

N-Channel100V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •ExtremelyLowQgdforSwitchingLosses •100RgTested •100AvalancheTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PrimarySideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI

PHK5NQ10T

文件：84.3 Kbytes

Page：7 Pages

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effecttransistorinaplasticenvelopeusing’trench’technology. FEATURES •Lowon-stateresistance •Fastswitching •Lowprofilesurfacemountpackage Applications:- •Motorandrelaydrivers •d.c.tod.c.converters

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

Philips

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