K50P03M1数据手册库存现货微碧半导体VBSEMI-114ic电子网

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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
K50P03M1	文件：1.02331 Mbytes Page：8 Pages	P-Channel 30 V (D-S) MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
TK50P03M1	文件：1.02495 Mbytes Page：8 Pages	P-Channel30V(D-S)MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
TK50P03M1	文件：332.95 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
TK50P03M1	文件：1.58274 Mbytes Page：73 Pages	BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 东芝株式会社东芝	TOSHIBA
TK50P03M1	文件：199.33 Kbytes Page：7 Pages	High-EfficiencyDC-DCConverterApplicationsDesktopPCApplications Features (1)High-speedswitching (2)Lowgatecharge:QSW=8.2nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=5.8mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10µA(max)(VDS=30V) (5)Enhancementmode:Vth=1.3to2.3V(VDS=10V,ID=0.2mA) Applications •Swi	TOSHIBAToshiba Semiconductor 东芝株式会社东芝	TOSHIBA

更多K50P03M1供应商更新时间2025-5-20 16:42:00