首页 >K4X51163PE/PG>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
32Mx16Mobile-DDRSDRAM FEATURES •1.8Vpowersupply,1.8VI/Opower •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •1/CS •1CKE •Differentialclockinputs(CKandCK) •MRScyclewithaddresskeyprograms -CASLatency(2,3) | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
32Mx16Mobile-DDRSDRAM FEATURES •1.8Vpowersupply,1.8VI/Opower •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •1/CS •1CKE •Differentialclockinputs(CKandCK) •MRScyclewithaddresskeyprograms -CASLatency(2,3) | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
32Mx16Mobile-DDRSDRAM FEATURES •1.8Vpowersupply,1.8VI/Opower •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •1/CS •1CKE •Differentialclockinputs(CKandCK) •MRScyclewithaddresskeyprograms -CASLatency(2,3) | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
32Mx16Mobile-DDRSDRAM FEATURES •1.8Vpowersupply,1.8VI/Opower •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •1/CS •1CKE •Differentialclockinputs(CKandCK) •MRScyclewithaddresskeyprograms -CASLatency(2,3) | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
32Mx16Mobile-DDRSDRAM FEATURES •1.8Vpowersupply,1.8VI/Opower •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe(DQS) •Fourbanksoperation •1/CS •1CKE •Differentialclockinputs(CKandCK) •MRScyclewithaddresskeyprograms -CASLatency(2,3) | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
32Mx16MobileDDRSDRAM | SamsungSamsung semiconductor 三星三星半导体 | Samsung |
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