K4T51043Q中文资料PDF规格书
K4T51043Q规格书详情
DDR2 SDRAM
The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4banks, 16Mbit x 8 I/Os x 4 banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double
data-rate transfer rates of up to 533Mb/sec/pin (DDR2-533) for
general applications.
The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance
adjustment and On Die Termination.
All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the crosspoint of differential clocks (CK rising and Kfalling). All I/Os are synchronized with a pair ofbidirectional strobes (DQS and DQS) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in a RAS/CASmultiplexing style. For example, 512Mb(x4) device receive 14/11/2 addressing.
The 512Mb DDR2 device operates with a single 1.8V ± 0.1V power supply and 1.8V ± 0.1V VDDQ.
The 512Mb DDR2 device is available in 60ball FBGAs(x4/x8) and in 84ball FBGAs(x16).
• JEDEC standard 1.8V ± 0.1V Power Supply
• VDDQ = 1.8V ± 0.1V
• 200 MHz fCKfor 400Mb/sec/pin, 267MHz fCKfor 533Mb/sec/pin
• 4 Banks
• Posted CAS
• Programmable CASLatency: 3, 4, 5
• Programmable Additive Latency: 0, 1 , 2 , 3 and 4
• Write Latency(WL) = Read Latency(RL) -1
• Burst Length: 4 , 8(Interleave/nibble sequential)
• Programmable Sequential / Interleave Burst Mode
• Bi-directional DifferentialData-Strobe (Single-ended data strobe is an optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination
• Special Function Support
-High Temperature Self-Refresh rate enable
• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE <95 °C
• Package: 60ball FBGA - 128Mx4/64Mx8 , 84ball FBGA - 32Mx16
• All of Lead-free products are compliant for RoHS
产品属性
- 型号:
K4T51043Q
- 制造商:
SAMSUNG
- 制造商全称:
Samsung semiconductor
- 功能描述:
512Mb B-die DDR2 SDRAM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
19+ |
BGA |
10535 |
进口原装现货 |
询价 | ||
SAMSUNG/三星 |
23+ |
NA/ |
3270 |
原装现货,当天可交货,原型号开票 |
询价 | ||
SAMSUNG |
2016+ |
FBGA60 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
N/A |
23+ |
NA |
6500 |
全新原装假一赔十 |
询价 | ||
SPANSION |
22+ |
QFN |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
SAMSUNG |
21+ |
FBGA60 |
35200 |
一级代理/放心采购 |
询价 | ||
SAMSUNG/三星 |
1948+ |
18562 |
只做原装正品现货!或订货假一赔十! |
询价 | |||
SAM |
23+ |
NA |
2355 |
专做原装正品,假一罚百! |
询价 | ||
SPANSION |
22+ |
QFN |
10000 |
绝对原装现货热卖 |
询价 | ||
SAMSUNG |
22+ |
BGA |
8000 |
原装正品支持实单 |
询价 |
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