首页>K4H561638E-TLB0>规格书详情
K4H561638E-TLB0中文资料三星数据手册PDF规格书
相关芯片规格书
更多K4H561638E-TLB0规格书详情
Features
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• MRS cycle with address key programs
-. Read latency 2, 2.5 (clock)
-. Burst length (2, 4, 8)
-. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
• Data I/O transactions on both edges of data strobe
• Edge aligned data output, center aligned data input
• LDM,UDM/DM for write masking only
• Auto & Self refresh
• 15.6us refresh interval(4K/64ms refresh)
• Maximum burst refresh cycle : 8
• 66pin TSOP II package
产品属性
- 型号:
K4H561638E-TLB0
- 制造商:
SAMSUNG
- 制造商全称:
Samsung semiconductor
- 功能描述:
128Mb DDR SDRAM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
24+ |
NA/ |
3764 |
原装现货,当天可交货,原型号开票 |
询价 | ||
SAMSUNG |
24+ |
TSOP |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
询价 | ||
SAMSUNG |
05+ |
TSSOP |
4078 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
SAMSUNG |
1738+ |
TSOP66 |
8529 |
科恒伟业!只做原装正品,假一赔十! |
询价 | ||
SAMSUNG |
24+ |
TSOP |
2568 |
原装优势!绝对公司现货 |
询价 | ||
SAMSANG |
19+ |
BGA |
256800 |
原厂代理渠道,每一颗芯片都可追溯原厂; |
询价 | ||
SAMSUNG |
新 |
8 |
全新原装 货期两周 |
询价 | |||
SAM |
23+ |
65480 |
询价 | ||||
SAMSUNG |
6000 |
面议 |
19 |
DIP/SMD |
询价 | ||
SAMSUNG |
21+ |
TSSOP-6 |
12588 |
原装正品,自己库存 假一罚十 |
询价 |