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K4H560838E-TLA2中文资料三星数据手册PDF规格书
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- K4H560838E-TC/LAA
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- K4H560838E-NCA2
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K4H560838E-TLA2规格书详情
Features
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• MRS cycle with address key programs
-. Read latency 2, 2.5 (clock)
-. Burst length (2, 4, 8)
-. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
• Data I/O transactions on both edges of data strobe
• Edge aligned data output, center aligned data input
• LDM,UDM/DM for write masking only
• Auto & Self refresh
• 15.6us refresh interval(4K/64ms refresh)
• Maximum burst refresh cycle : 8
• 66pin TSOP II package
产品属性
- 型号:
K4H560838E-TLA2
- 制造商:
SAMSUNG
- 制造商全称:
Samsung semiconductor
- 功能描述:
256Mb E-die DDR SDRAM Specification 66 TSOP-II
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
24+ |
NA/ |
3260 |
原装现货,当天可交货,原型号开票 |
询价 | ||
SAMSUNG |
2016+ |
TSOP54 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
SAMSUNG |
23+ |
TSOP66 |
20000 |
全新原装假一赔十 |
询价 | ||
SAMSUNG |
2016+ |
TSOP54 |
6523 |
只做进口原装现货!假一赔十! |
询价 | ||
SAMSUNG |
25+23+ |
TSSOP |
37579 |
绝对原装正品全新进口深圳现货 |
询价 | ||
HYNIX |
22+ |
SOP |
8000 |
原装正品支持实单 |
询价 | ||
SAMSUNG |
04+ |
TSOP66 |
1785 |
全新原装进口自己库存优势 |
询价 | ||
SAMSANG |
19+ |
TSOP54 |
256800 |
原厂代理渠道,每一颗芯片都可追溯原厂; |
询价 | ||
SAMSUNG |
6000 |
面议 |
19 |
TSOP |
询价 | ||
SAMSUNG |
16+ |
QFP |
4000 |
进口原装现货/价格优势! |
询价 |