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K4H510838D-UC/LCC

512MbD-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung semiconductor

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K4H510838D-UCC

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung semiconductor

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K4H510838D-UCSLASHLCC

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung semiconductor

三星三星半导体

K4H510838D-UCSLASHLCC

512MbD-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif

SamsungSamsung semiconductor

三星三星半导体

K4H510838F

512MbF-dieDDRSDRAMSpecification

ConsumerMemory

SamsungSamsung semiconductor

三星三星半导体

K4H510838F

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung semiconductor

三星三星半导体

K4H510838F-LC/LCC

512MbF-dieDDRSDRAMSpecification

ConsumerMemory

SamsungSamsung semiconductor

三星三星半导体

K4H510838F-LCSLASHLCC

512MbF-dieDDRSDRAMSpecification

ConsumerMemory

SamsungSamsung semiconductor

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K4H510838G

512MbG-dieDDRSDRAMSpecification

GeneralDescription TheK4H510438G/K4H510838G/K4H511638Gis536,870,912bitsofdoubledataratesynchronousDRAMorganizedas4x33,554,432/4x16,777,216/4x8,388,608wordsby4/8/16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeal

SamsungSamsung semiconductor

三星三星半导体

K4H510838G

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung semiconductor

三星三星半导体

详细参数

  • 型号:

    K4H510838C-UCB

  • 制造商:

    SAMSUNG

  • 制造商全称:

    Samsung semiconductor

  • 功能描述:

    512Mb C-die DDR SDRAM Specification

供应商型号品牌批号封装库存备注价格
SAM
23+
TSOP
28610
询价
SAMSUNG
24+
TSOP66
55
询价
SAMSUNG
06+
TSOP66
2210
全新原装进口自己库存优势
询价
SAMSUNG
24+
TSOP
6980
原装现货,可开13%税票
询价
SAMSUNG
24+
TSOP/66
1068
原装现货假一罚十
询价
SAMSUNG
23+
TSSOP
5000
原装正品,假一罚十
询价
SAMSUNG
23+
TSSOP
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
SAMSUNG
17+
TSOP66
9988
只做原装进口,自己库存
询价
SAMSUNG
06+
TSOP/66
55
原装现货海量库存欢迎咨询
询价
SAMSUNG
17+
TSOP
5188
询价
更多K4H510838C-UCB供应商 更新时间2025-7-14 16:36:00