K4E640812E-JCSLASHL数据表ic资料供应代理-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
K4E640812E-JCSLASHL	文件：190.72 Kbytes Page：21 Pages	8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe 文件：190.72 Kbytes 页数：21 Pages	Samsung 三星	Samsung
K4E640812E-TC/L	文件：190.72 Kbytes Page：21 Pages	8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe 文件：190.72 Kbytes 页数：21 Pages	Samsung 三星	Samsung
K4E640812E-TCSLASHL	文件：190.72 Kbytes Page：21 Pages	8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe 文件：190.72 Kbytes 页数：21 Pages	Samsung 三星	Samsung
K4E640812B	文件：416.71 Kbytes Page：21 Pages	8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe 文件：416.71 Kbytes 页数：21 Pages	Samsung 三星	Samsung
K4E640812C	文件：416.25 Kbytes Page：21 Pages	8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe 文件：416.25 Kbytes 页数：21 Pages	Samsung 三星	Samsung
K4E640812E	文件：190.72 Kbytes Page：21 Pages	8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional fe 文件：190.72 Kbytes 页数：21 Pages	Samsung 三星	Samsung

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市近平电子有限公司	K4E640812E-TC50	SAMSUNG	6000	面议	19	TSOP	询价
京海半导体(深圳)有限公司	K4E640812E-TC50	SAMSUNG/三星	21+	TSSOP	10000	原装现货假一罚十	询价
深圳市益百分电子有限公司	K4E640812E-TC60	SAMSUNG	02+	TSOP	2255	全新原装进口自己库存优势	询价
谛辉(北京/上海/青岛 )电子科技有限公司	K4E640812E-TC60	SAMSUNG	25+	标准封装	18000	原厂直接发货进口原装	询价
深圳市卓越微芯电子有限公司	K4E640812E-TC60	SAMSUNG	25+	SSOP	5	百分百原装正品真实公司现货库存本公司只做原装可	询价
上海专毅电子科技有限公司	K4E640812E-TC60	SAMSUNG	17+	TSOP	9988	只做原装进口,自己库存	询价
深圳市壹芯创科技有限公司	K4E640812E-TC60	SAMSUNG	22+	SSOP	5000	全新原装现货!自家库存!	询价
深圳市华斯顿科技有限公司	K4E640812E-TC60	SAMSUNG	25+23+	TSOP32	7975	绝对原装正品全新进口深圳现货	询价
深圳市英卓尔科技有限公司	K4E640812E-TC60	SAMSUNG	20+	SSOP	2960	诚信交易大量库存现货	询价
瀚佳科技(深圳)有限公司	K4E640812E-TC60	SAMSUNG	24+	TSOP32	9860	原装现货/放心购买	询价

更多K4E640812E-JCSLASHL供应商更新时间2025-9-26 17:21:00

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