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K4E640812E-JCSLASHL

8M x 8bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung semiconductor

三星三星半导体

K4E640812B

8Mx8bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung semiconductor

三星三星半导体

K4E640812C

8Mx8bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung semiconductor

三星三星半导体

K4E640812E

8Mx8bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung semiconductor

三星三星半导体

K4E640812E-JC/L

8Mx8bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung semiconductor

三星三星半导体

K4E640812E-TC/L

8Mx8bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung semiconductor

三星三星半导体

K4E640812E-TCSLASHL

8Mx8bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung semiconductor

三星三星半导体

供应商型号品牌批号封装库存备注价格
SAMSUNG
23+
TSOP
3000
特价库存
询价
SAMSUNG
6000
面议
19
TSOP
询价
SAMSUNG/三星
21+
TSSOP
10000
原装现货假一罚十
询价
SAMSUNG
02+
TSOP
2255
全新原装进口自己库存优势
询价
SAMSUNG
2016+
TSOP32
5562
只做进口原装现货!或订货!假一赔十!
询价
SAMSUNG
2020+
SSOP
5
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
SAMSUNG
17+
TSOP
9988
只做原装进口,自己库存
询价
SAMSANG
19+
TSOP32
256800
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
SAMSUNG
22+
SSOP
5000
全新原装现货!自家库存!
询价
SAMSUNG
25+23+
TSOP32
7975
绝对原装正品全新进口深圳现货
询价
更多K4E640812E-JCSLASHL供应商 更新时间2025-5-5 14:02:00