4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.

Samsung

三星

4M x 4Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION This is a family of 4.194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60

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Samsung

三星

BGA

SAMSUNG/三星

上传：深圳庞田科技有限公司

FBGA

SAMSUNG/三星

上传：深圳庞田科技有限公司

FBGA

SAMSUNG/三星

上传：深圳庞田科技有限公司