首页 >K4B4G1646B-HCKO存储IC>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
4GbB-dieDDR3SDRAMOlnyx16 The4GbDDR3SDRAMB-dieisorganizedasa32Mbitx16I/Osx8banks,device.Thissynchronousdeviceachieveshighspeeddouble-data-ratetransferratesofupto2133Mb/sec/pin(DDR3-2133)forgeneralapplications. KeyFeatures •JEDECstandard1.5V(1.425V~1.575V) •VDDQ=1.5V(1.425V~1.575V) | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
4GbB-dieDDR3SDRAMOlnyx16 The4GbDDR3SDRAMB-dieisorganizedasa32Mbitx16I/Osx8banks,device.Thissynchronousdeviceachieveshighspeeddouble-data-ratetransferratesofupto2133Mb/sec/pin(DDR3-2133)forgeneralapplications. KeyFeatures •JEDECstandard1.5V(1.425V~1.575V) •VDDQ=1.5V(1.425V~1.575V) | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
PRODUCTSELECTIONGUIDEDisplays,MemoryandStorage Samsungcontinuestoleadtheindustrywiththebroadestportfolioofmemoryproductsand displaytechnology.Itsdisplaypanels,DRAM,flash,mobileandgraphicsmemoryarefoundinmany computers–fromultrabookstopowerfulservers–andinawiderangeofhandhelddevicessuch assmartphon | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
4GbE-dieDDR3LSDRAM | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
4GbE-dieDDR3LSDRAM | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
4GbE-dieDDR3LSDRAM | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
4GbQ-dieDDR3LSDRAMOlnyx1696FBGAwithLead-Free&Halogen-Free(RoHScompliant)1.35V | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
PRODUCTSELECTIONGUIDEDisplays,MemoryandStorage Samsungcontinuestoleadtheindustrywiththebroadestportfolioofmemoryproductsand displaytechnology.Itsdisplaypanels,DRAM,flash,mobileandgraphicsmemoryarefoundinmany computers–fromultrabookstopowerfulservers–andinawiderangeofhandhelddevicessuch assmartphon | SamsungSamsung semiconductor 三星三星半导体 | Samsung |
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