4Gb B-die DDR3 SDRAM Olny x16

The 4Gb DDR3 SDRAM B-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. Key Features • JEDEC standard 1.5V(1.425V~1.575V) • VDDQ = 1.5V(1.425V~1.575V)

文件：1.00226 Mbytes 页数：64 Pages

Samsung

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4Gb B-die DDR3 SDRAM Olny x16

The 4Gb DDR3 SDRAM B-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. Key Features • JEDEC standard 1.5V(1.425V~1.575V) • VDDQ = 1.5V(1.425V~1.575V)

文件：1.00226 Mbytes 页数：64 Pages

Samsung

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4Gb B-die DDR3 SDRAM Olny x16

The 4Gb DDR3 SDRAM B-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications. Key Features • JEDEC standard 1.5V(1.425V~1.575V) • VDDQ = 1.5V(1.425V~1.575V)

文件：1.00226 Mbytes 页数：64 Pages

Samsung

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PRODUCT SELECTION GUIDE Displays, Memory and Storage

Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its display panels, DRAM, flash, mobile and graphics memory are found in many computers – from ultrabooks to powerful servers – and in a wide range of handheld devices such as smartphon

文件：4.63909 Mbytes 页数：28 Pages

Samsung

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