K4B4G1646B-HCF8中文资料三星数据手册PDF规格书

The 4Gb DDR3 SDRAM B-die is organized as a 32Mbit x 16 I/Os x 8banks, device. This synchronous device achieves high speed double-data-rate transfer rates of up to 2133Mb/sec/pin (DDR3-2133) for general applications.

Key Features

• JEDEC standard 1.5V(1.425V~1.575V)

• VDDQ = 1.5V(1.425V~1.575V)

• 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin,

667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin,

933MHz fCK for 1866Mb/sec/pin, 1066 MHz fCK for 2133Mb/sec/pin

• 8 Banks

• Programmable CAS Latency(posted CAS): 5,6,7,8,9,10,11,12,13,14

• Programmable Additive Latency: 0, CL-2 or CL-1 clock

• Programmable CAS Write Latency (CWL) = 5 (DDR3-800), 6

(DDR3-1066), 7 (DDR3-1333) , 8 (DDR3-1600), 9 (DDR3-1866) and

10 (DDR3-2133)

• 8-bit pre-fetch

• Burst Length: 8 (Interleave without any limit, sequential with starting

address “000” only), 4 with tCCD = 4 which does not allow seamless

read or write [either On the fly using A12 or MRS]

• Bi-directional Differential Data-Strobe

• Internal(self) calibration : Internal self calibration through ZQ pin

(RZQ : 240 ohm ± 1)

• On Die Termination using ODT pin

• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at

85°C < TCASE < 95 °C

• Support Industrial Temp ( -40 ∼ 85°C )

• Asynchronous Reset

• Package : 96 balls FBGA - x16

• All of Lead-Free products are compliant for RoHS

• All of products are Halogen-free