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K4B4G0846B

DDR3SDRAMMemory

SamsungSamsung semiconductor

三星三星半导体

K4B4G0846B

DDP4GbB-dieDDR3SDRAMSpecification

KeyFeatures •JEDECstandard1.5V±0.075VPowerSupply •VDDQ=1.5V±0.075V •400MHzfCKfor800Mb/sec/pin,533MHzfCKfor1066Mb/sec/pin, 667MHzfCKfor1333Mb/sec/pin •8Banks •PostedCAS •ProgrammableCASLatency(postedCAS):6,7,8,9,10 •ProgrammableAdditiveLatency:0,

SamsungSamsung semiconductor

三星三星半导体

K4B4G0846C

DDR3SDRAMMemory

SamsungSamsung semiconductor

三星三星半导体

K4B4G0846D

DDR3SDRAMMemory

SamsungSamsung semiconductor

三星三星半导体

K4B4G0846D-BC

PRODUCTSELECTIONGUIDEDisplays,MemoryandStorage

Samsungcontinuestoleadtheindustrywiththebroadestportfolioofmemoryproductsand displaytechnology.Itsdisplaypanels,DRAM,flash,mobileandgraphicsmemoryarefoundinmany computers–fromultrabookstopowerfulservers–andinawiderangeofhandhelddevicessuch assmartphon

SamsungSamsung semiconductor

三星三星半导体

K4B4G0846E

4GbE-dieDDR3LSDRAM

SamsungSamsung semiconductor

三星三星半导体

K4B4G0846E-BMMA

4GbE-dieDDR3LSDRAM

SamsungSamsung semiconductor

三星三星半导体

K4B4G0846E-BYMA

4GbE-dieDDR3LSDRAM

SamsungSamsung semiconductor

三星三星半导体

K4B4G0846Q-HC

PRODUCTSELECTIONGUIDEDisplays,MemoryandStorage

Samsungcontinuestoleadtheindustrywiththebroadestportfolioofmemoryproductsand displaytechnology.Itsdisplaypanels,DRAM,flash,mobileandgraphicsmemoryarefoundinmany computers–fromultrabookstopowerfulservers–andinawiderangeofhandhelddevicessuch assmartphon

SamsungSamsung semiconductor

三星三星半导体

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