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K4B2G0446B

DDR3SDRAMMemory

DDR3SDRAMSpecification DDR3SDRAMMemory

SamsungSamsung semiconductor

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K4B2G0446C

DDR3SDRAMMemory

SamsungSamsung semiconductor

三星三星半导体

K4B2G0446C

DDR3SDRAMMemory

DDR3SDRAMSpecification DDR3SDRAMMemory

SamsungSamsung semiconductor

三星三星半导体

K4B2G0446D

DDR3SDRAMMemory

SamsungSamsung semiconductor

三星三星半导体

K4B2G0446D

2GbD-dieDDR3LSDRAM

The2GbDDR3SDRAMD-dieisorganizedasa64Mbitx4I/Osx8banks,32Mbitx8I/Osx8banksdevice.Thissynchronousdeviceachieveshighspeeddouble-data-ratetransferratesofupto1600Mb/sec/pin(DDR3-1600)forgeneralapplications.ThechipisdesignedtocomplywiththefollowingkeyDDR3

SamsungSamsung semiconductor

三星三星半导体

K4B2G0446E

DDR3SDRAMMemory

SamsungSamsung semiconductor

三星三星半导体

K4B2G0446E

DDR3SDRAMMemory

DDR3SDRAMSpecification DDR3SDRAMMemory

SamsungSamsung semiconductor

三星三星半导体

K4B2G0446Q-BC

PRODUCTSELECTIONGUIDEDisplays,MemoryandStorage

Samsungcontinuestoleadtheindustrywiththebroadestportfolioofmemoryproductsand displaytechnology.Itsdisplaypanels,DRAM,flash,mobileandgraphicsmemoryarefoundinmany computers–fromultrabookstopowerfulservers–andinawiderangeofhandhelddevicessuch assmartphon

SamsungSamsung semiconductor

三星三星半导体

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