丝印：K408；Package：SO8；Low-power dual operational amplifiers

Features Frequency compensation implemented internally Large DC voltage gain: 100 dB Wide bandwidth (unity gain): 1.1 MHz (temperature compensated) Very low supply current per channel essentially independent of supply voltage Low input bias current: 20 nA (temperature compensated) Low input

文件：1.07811 Mbytes 页数：25 Pages

STMICROELECTRONICS

意法半导体

丝印：K408；Package：miniSO-8；Low Power Dual Operational Amplifiers

■ Internally frequency compensated ■ Large DC voltage gain: 100dB ■ Wide bandwidth (unity gain): 1.1mHz (temperature compensated) ■ Very low supply current/op (500μA) essentially independent of supply voltage ■ Low input bias current: 20nA (temperature compensated) ■ Low input offset volta

文件：276.79 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.08673 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • High reliability (Adoption of HVP process). • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee.

文件：56.01 Kbytes 页数：5 Pages

SANYO

三洋

N-Channel 30-V (D-S) MOSFET

文件：960.27 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件：960.27 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel 650 V (D-S) MOSFET

文件：1.08722 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 650 V (D-S) MOSFET

文件：1.08668 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

文件：56.16 Kbytes 页数：5 Pages

SANYO

三洋

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

文件：56.52 Kbytes 页数：5 Pages

SANYO

三洋