MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4075 is N-channel MOS FET designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Low Ciss: Ciss = 2900 pF T

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RENESAS

瑞萨

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

文件：399.71 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)

TRANSISTOR竊뉿PN 竊

TRANSISTOR (NPN) FEATURES Power dissipation PCM : 0.1 W（ Tamb=25℃） Collector current ICM: 0.15 A Collector-base voltage V(BR)CBO : 60 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃

文件：131.77 Kbytes 页数：2 Pages

JIANGSU

长电科技

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ● Excellent hFE linearity ● High hFE ● Low Noise ● Complementary to KTA2014

文件：182.62 Kbytes 页数：3 Pages

JIANGSU

长电科技