N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.08651 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

DC-DC Converter, Relay Drive and Motor Drive Applications

1. Low drain-source ON resistance: RDS (ON)= 4.0 Ω(typ.) 2. High forward transfer admittance: Yfs= 0.6 S (typ.) 3. Low leakage current: IDSS= 100 µA (max) (VDS= 400 V) 4. Enhancement-model: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1mA)

文件：115.33 Kbytes 页数：3 Pages

TOSHIBA

东芝

N-Channel 650 V (D-S) MOSFET

文件：1.08646 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Three Phase Rectifier Bridge

Features ● Soldering connections for PCB mounting ● Isolation voltage 3600 V~ ● Convenient package outline ● UL registered E 72873 ● Case and potting UL94 V-0 Applications ● Input Rectifier for Drive Inverters Advantages ● Easy to mount with two screws ● Suitable for wave soldering ● Hi

文件：59.4 Kbytes 页数：3 Pages

IXYS

艾赛斯

100 mA, SOT-23, Quasi Low-Dropout Linear Voltage Regulator with Logic-Controlled ON/OFF

文件：291.48 Kbytes 页数：10 Pages

NSC

国半

Quad 741 Op Amps LM149 Wide Band Decompensated (AV MIN = 5)

文件：388.73 Kbytes 页数：15 Pages

NSC

国半