Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The K3520PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration. FEATURES • Low on-state resistance RDS(ON)1 = 16mΩ MAX (VGS=4.5V, IS=1.0A) RDS(ON)2 = 17mΩ MAX (VGS=3.9V, IS=1.0A) RDS(ON)3

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KEC

KEC(Korea Electronics)

N CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

文件：98.5 Kbytes 页数：4 Pages

FUJI

富士通

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

文件：106.16 Kbytes 页数：4 Pages

FUJI

富士通

Logic Plus™

文件：9.6955 Mbytes 页数：19 Pages

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N-CHANNEL SILICON POWER MOSFET

1. High speed switching\n2. Low on-resistance\n3. No secondary breadown\n4. Low driving power\n5. Avalanche-proof;

FUJI

富士通

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description\nThe K3520PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration.FEATURES\n· Low on-state resistance\nRDS(ON)1 = 16mΩ MAX (VGS=4.5V, IS=1.0A)\nRDS(ON)2 = 17mΩ MAX (VGS=3.9V, IS=1.0A)\nRDS(ON)3 = 20mΩ MAX (V · Low on-state resistance\nRDS(ON)1 = 16mΩ MAX (VGS=4.5V, IS=1.0A)\nRDS(ON)2 = 17mΩ MAX (VGS=3.9V, IS=1.0A)\nRDS(ON)3 = 20mΩ MAX (VGS=3.5V, IS=1.0A);

KEC