| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
Heyco짰NylonCableClamps | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
HIGHVOLTAGELOWSENSITIVITYHALLEFFECTUNIPOLARSWITCH | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
HIGHVOLTAGELOWSENSITIVITYHALLEFFECTUNIPOLARSWITCH | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
HIGHVOLTAGELOWSENSITIVITYHALLEFFECTUNIPOLARSWITCH | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
HIGHVOLTAGELOWSENSITIVITYHALLEFFECTUNIPOLARSWITCH | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
HIGHVOLTAGELOWSENSITIVITYHALLEFFECTUNIPOLARSWITCH | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
HIGHVOLTAGELOWSENSITIVITYHALLEFFECTUNIPOLARSWITCH | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
2SC2673 FTR•FTL Lowprofileflat-packageforlimitedspeceapplications. Tapetypecanbeusedonautomatedline.Bulktypeisalsoavailable. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
W-bandMultifunction:Multiplier/MPA | UMSUnited Monolithic Semiconductors United Monolithic Semiconductors | UMS | ||
W-bandMultifunction:Multiplier/MPA | UMSUnited Monolithic Semiconductors United Monolithic Semiconductors | UMS | ||
DigitallyControllableOff-LineCV/CCQRFlybackSwitcherICwithIntegratedHigh-VoltageSwitch,SynchronousRectificationandFluxLinkFeedback DigitallyControlledviaI2CInterface •Dynamicadjustmentofpowersupplyvoltageandcurrent •Telemetryforpowersupplystatusandfaultmonitoring •Comprehensivesetofconfigurableprotectionfeatures •PowiGaN™technology–upto100Wwithoutheatsinks(INN3378C, INN3379CandINN337 | POWERINTPower Integrations, Inc. 荷兰帕沃英蒂格盛有限公司 | POWERINT | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3377isN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •LowOn-stateResistance RDS(on)1=44mΩMAX.(VGS=10V,ID=10A) RDS(on)2=78mΩMAX.(VGS=4.0V,ID=10A) •LowCiss:Ciss=760pFTY | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFieldEffectTransistor Features •Lowon-resistance RDS(on)1=44mMAX.(VGS=10V,ID=10A) RDS(on)2=78mMAX.(VGS=4.0V,ID=10A) •LowCiss:Ciss=760pFTYP. •Built-ingateprotectiondiode | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
Lowon-resistance | TYSEMITaiwan TY Semiconductor Co. , Ltd. 台湾TY半导体台湾TY半导体有限公司 | TYSEMI | ||
±15kVESD-Protected,1μA,16Mbps,Dual/QuadLow-VoltageLevelTranslatorsinUCSP | MaximMaximIntegrated 美信半导体 | Maxim | ||
±15kVESD-Protected,1uA,16Mbps,DualQuadLow-VoltageLevelTranslatorsinUCSP | MaximMaximIntegrated 美信半导体 | Maxim | ||
±15kVESD-Protected,1uA,16Mbps,DualQuadLow-VoltageLevelTranslatorsinUCSP | MaximMaximIntegrated 美信半导体 | Maxim | ||
짹15kVESD-Protected,1關A,16Mbps,Dual/QuadLow-VoltageLevelTranslatorsinUCSP GeneralDescription TheMAX3372E–MAX3379EandMAX3390E–MAX3393E±15kVESD-protectedleveltranslatorsprovidethelevel shiftingnecessarytoallowdatatransferinamultivoltagesystem.Externallyappliedvoltages,VCCandVL,setthe logiclevelsoneithersideofthedevice.Alow-voltage | MaximMaximIntegrated 美信半导体 | Maxim | ||
±15kVESD-Protected,1μA,16Mbps,Dual/QuadLow-VoltageLevelTranslatorsinUCSP | MaximMaximIntegrated 美信半导体 | Maxim |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VB |
2019 |
TO-252 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
VBSEMI |
19+ |
TO-252 |
29600 |
绝对原装现货,价格优势! |
询价 | ||
6000 |
面议 |
19 |
DIP/SMD |
询价 | |||
OAK |
03+ |
TQFP-L208P |
400 |
询价 | |||
OAK |
22+ |
TQFP-L208P |
2560 |
绝对原装!现货热卖! |
询价 | ||
OAK |
22+ |
QFP-208 |
6500 |
只做原装正品.或订货假一赔十! |
询价 | ||
N |
23+ |
TO-251 |
33500 |
全新原装真实库存含13点增值税票! |
询价 | ||
N |
23+ |
TO-251 |
10000 |
公司只做原装正品 |
询价 | ||
VBSEMI/台湾微碧 |
23+ |
TO251 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
NA |
21+ |
NA |
10000 |
原装现货假一罚十 |
询价 |
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