Silicon N Channel MOS FET / High Speed Power Switching

•  Low on-resistance: RDS(on)= 0.3 Ωtyp.\n•  Low leakage current: IDSS = 1 µA max (at VDS = 500 V)\n•  High speed switching: tf = 50 ns typ (at VGS = 10 V, VDD = 250 V, ID = 7.5 A)\n•  Low gate charge: Qg = 48 nC typ (at VDD = 400 V, VGS = 10 V, ID = 15 A)\n•  Avalanche ratings

Renesas

瑞萨

Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.

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RENESAS

瑞萨

HIGHLY INTEGRATED SLIC KIT TARGETED TO PABX AND KEY SYSTEM APPLICATIONS

DESCRIPTION The L3234/L3235 is a highly integrated SLIC KIT targeted to PABX and key system applications The kit integrates the majority of functions required to interface a telephone line. The L3234/L3235 implements the main features of the broths function: - Battery Feed (Balanced Mode) - Ri

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STMICROELECTRONICS

意法半导体

1.5 V Record Preamplifier

Overview The LA3235W is a single-chip record system IC for use in 1.5 V headphone stereo products. While previous recording systems were implemented using a dedicated tape drive, by using the LA3235W, such a system can be implemented by adding electronic switching to a playback-only tape drive. A

文件：352.38 Kbytes 页数：13 Pages

SANYO

三洋

Ultra-Low PDL Fused Tap Coupler

文件：166.99 Kbytes 页数：3 Pages

OPLINK